Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.1mm
Latime
1.5mm
Tara de origine
China
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,33
Buc. (Livrat pe rola) (fara TVA)
€ 0,393
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
200
€ 0,33
Buc. (Livrat pe rola) (fara TVA)
€ 0,393
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
200
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
200 - 480 | € 0,33 | € 6,60 |
500 - 980 | € 0,28 | € 5,60 |
1000 - 1980 | € 0,25 | € 5,00 |
2000+ | € 0,22 | € 4,40 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.1mm
Latime
1.5mm
Tara de origine
China
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.