Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.1mm
Latime
1.5mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 6,20
€ 0,31 Buc. (Intr-un pachet de 20) (fara TVA)
€ 7,50
€ 0,375 Buc. (Intr-un pachet de 20) (cu TVA)
Standard
20
€ 6,20
€ 0,31 Buc. (Intr-un pachet de 20) (fara TVA)
€ 7,50
€ 0,375 Buc. (Intr-un pachet de 20) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
20
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 20 - 180 | € 0,31 | € 6,20 |
| 200 - 480 | € 0,26 | € 5,20 |
| 500 - 980 | € 0,23 | € 4,60 |
| 1000 - 1980 | € 0,20 | € 4,00 |
| 2000+ | € 0,18 | € 3,60 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Inaltime
1.1mm
Latime
1.5mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


