Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Latime
1.5mm
Lungime
2.9mm
Inaltime
1.1mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 9,25
€ 0,37 Buc. (Intr-un pachet de 25) (fara TVA)
€ 11,19
€ 0,448 Buc. (Intr-un pachet de 25) (cu TVA)
25
€ 9,25
€ 0,37 Buc. (Intr-un pachet de 25) (fara TVA)
€ 11,19
€ 0,448 Buc. (Intr-un pachet de 25) (cu TVA)
Informatii despre stoc temporar indisponibile
25
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 75 | € 0,37 | € 9,25 |
100 - 225 | € 0,32 | € 8,00 |
250 - 475 | € 0,27 | € 6,75 |
500 - 975 | € 0,24 | € 6,00 |
1000+ | € 0,21 | € 5,25 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
CP
Numar pini
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+150 °C
Latime
1.5mm
Lungime
2.9mm
Inaltime
1.1mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.