Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V
Tip pachet
PCP
Montare
Surface Mount
Maximum Power Dissipation
3.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
6.5 V
Maximum Operating Frequency
180 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
4.5 x 2.5 x 1.5mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
1000
P.O.A.
1000
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
60 V
Tip pachet
PCP
Montare
Surface Mount
Maximum Power Dissipation
3.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
6.5 V
Maximum Operating Frequency
180 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
4.5 x 2.5 x 1.5mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.