Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Lungime
2.9mm
Typical Gate Charge @ Vgs
0.81 nC @ 5 V
Latime
1.3mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
0.94mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Czech Republic
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Lungime
2.9mm
Typical Gate Charge @ Vgs
0.81 nC @ 5 V
Latime
1.3mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
0.94mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Czech Republic
Detalii produs