Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
160 V
Tip pachet
TO-92
Timp montare
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
180 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
5.2 x 4.19 x 5.33mm
Temperatura maxima de lucru
+150 °C
Detalii produs
Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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10000
€ 400,00
€ 0,04 Buc. (Intr-o punga de 10000) (fara TVA)
€ 476,00
€ 0,048 Buc. (Intr-o punga de 10000) (cu TVA)
10000
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
160 V
Tip pachet
TO-92
Timp montare
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
180 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
5.2 x 4.19 x 5.33mm
Temperatura maxima de lucru
+150 °C
Detalii produs
Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.