Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
9.28 x 10.28 x 4.82mm
Temperatura maxima de lucru
+150 °C
Detalii produs
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Impachetare pentru productie (Tub)
20
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Impachetare pentru productie (Tub)
20
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
9.28 x 10.28 x 4.82mm
Temperatura maxima de lucru
+150 °C
Detalii produs
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.