Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
24 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
6.1mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Latime
5.1mm
Number of Elements per Chip
2
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
1500
P.O.A.
1500
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
24 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
6.1mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Latime
5.1mm
Number of Elements per Chip
2
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs