Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
30 V
Tip pachet
WDFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
20.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
150 °C
Lungime
3.15mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Inaltime
0.75mm
Dimensiune celula
NTTFS4928N
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
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P.O.A.
1500
P.O.A.
1500
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
30 V
Tip pachet
WDFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
20.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
150 °C
Lungime
3.15mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Inaltime
0.75mm
Dimensiune celula
NTTFS4928N
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V