Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
270 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-323 (SC-70)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.9mm
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
50
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
270 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-323 (SC-70)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.9mm
Detalii produs