Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
96 W
Transistor Configuration
Cascode
Maximum Gate Source Voltage
-18 V, +18 V
Transistor Material
GaN
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Latime
4.83mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
2.2V
Inaltime
15.75mm
Tara de origine
Philippines
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
96 W
Transistor Configuration
Cascode
Maximum Gate Source Voltage
-18 V, +18 V
Transistor Material
GaN
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.53mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Latime
4.83mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
2.2V
Inaltime
15.75mm
Tara de origine
Philippines