Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO-8FL
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
24.5 nC @ 4.5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.1mm
Latime
6.1mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO-8FL
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
24.5 nC @ 4.5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.1mm
Latime
6.1mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm