Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
36 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5mm
Typical Gate Charge @ Vgs
4.8 nC @ 4.5 V
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
36 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5mm
Typical Gate Charge @ Vgs
4.8 nC @ 4.5 V
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs