Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
27 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5mm
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
27 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5mm
Inaltime
1.5mm
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs