Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N, P
Maximum Continuous Drain Current
1.1 A, 910 mA
Maximum Drain Source Voltage
8 V, 20 V
Tip pachet
SOT-363 (SC-88)
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
445 mΩ, 900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
550 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, -8 V, +12 V, +8 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
1.3 nC @ 4.5 V, 2.2 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N, P
Maximum Continuous Drain Current
1.1 A, 910 mA
Maximum Drain Source Voltage
8 V, 20 V
Tip pachet
SOT-363 (SC-88)
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
445 mΩ, 900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
550 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, -8 V, +12 V, +8 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
1.3 nC @ 4.5 V, 2.2 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.