Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Tip pachet
TSOP
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Latime
1.7mm
Number of Elements per Chip
1
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Tip pachet
TSOP
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Latime
1.7mm
Number of Elements per Chip
1
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Detalii produs