Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
29 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Latime
2.38mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
7.62mm
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Tip pachet
IPAK (TO-251)
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
29 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Latime
2.38mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
7.62mm