Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
59 V
Dimensiune celula
AEC-Q101
Tip pachet
DPAK
Numar pini
4
Maximum Drain Source Resistance
1.21 Ω
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
2
Transistor Material
Plastic
Informatii indisponibile despre stoc
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Informatii indisponibile despre stoc
P.O.A.
Dual Plastic N-Channel MOSFET Transistor, 35 A, 59 V, 4-Pin DPAK onsemi NID9N05BCLT4G
2500
P.O.A.
Dual Plastic N-Channel MOSFET Transistor, 35 A, 59 V, 4-Pin DPAK onsemi NID9N05BCLT4G
Informatii indisponibile despre stoc
2500
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
59 V
Dimensiune celula
AEC-Q101
Tip pachet
DPAK
Numar pini
4
Maximum Drain Source Resistance
1.21 Ω
Maximum Gate Threshold Voltage
2.5V
Number of Elements per Chip
2
Transistor Material
Plastic