Documente tehnice
Specificatii
Marca
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
117 W
Tip pachet
TO-220
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
10.28 x 4.82 x 15.75mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
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Documente tehnice
Specificatii
Marca
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
117 W
Tip pachet
TO-220
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
10.28 x 4.82 x 15.75mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C