Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Lungime
10.63mm
Latime
4.9mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
16.12mm
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Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Lungime
10.63mm
Latime
4.9mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
16.12mm