Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
500 V
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
58 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Inaltime
7.62mm
Frecventa minima de auto-rezonanta
-55 °C
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P.O.A.
5
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
500 V
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
58 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Inaltime
7.62mm
Frecventa minima de auto-rezonanta
-55 °C