Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
P
Idss Drain-Source Cut-off Current
1.5 → 20mA
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Inaltime
0.93mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Detalii produs
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
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P.O.A.
5
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
P
Idss Drain-Source Cut-off Current
1.5 → 20mA
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Inaltime
0.93mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Detalii produs
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.