Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
1 → 5mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Inaltime
0.93mm
Latime
1.3mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
100
P.O.A.
100
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
1 → 5mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Inaltime
0.93mm
Latime
1.3mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.