Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Tip pachet
TO-220AB
Montare
Through Hole
Maximum Power Dissipation
100 W
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
4 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
9.28 x 10.28 x 4.82mm
P.O.A.
1
P.O.A.
Informatii despre stoc temporar indisponibile
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Tip pachet
TO-220AB
Montare
Through Hole
Maximum Power Dissipation
100 W
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
4 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
9.28 x 10.28 x 4.82mm


