Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum DC Collector Current
-8 A
Maximum Collector Emitter Voltage
-80 V
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Maximum Power Dissipation
20 W
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
10 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
20 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
6.73 x 2.38 x 6.22mm
Detalii produs
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Impachetare pentru productie (Tub)
15
P.O.A.
Each (Supplied in a Tube) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
15
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum DC Collector Current
-8 A
Maximum Collector Emitter Voltage
-80 V
Tip pachet
IPAK (TO-251)
Timp montare
Through Hole
Maximum Power Dissipation
20 W
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
10 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
20 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
6.73 x 2.38 x 6.22mm
Detalii produs
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.


