Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Inaltime
2.38mm
Latime
6.22mm
Dimensiuni
6.73 x 6.22 x 2.38mm
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Maximum Power Dissipation
20 W
Frecventa minima de auto-rezonanta
-65 °C
Detalii produs
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Inaltime
2.38mm
Latime
6.22mm
Dimensiuni
6.73 x 6.22 x 2.38mm
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Maximum Power Dissipation
20 W
Frecventa minima de auto-rezonanta
-65 °C
Detalii produs
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.