Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
2 V
Maximum Emitter Base Voltage
5 V
Tip pachet
PDIP
Timp montare
Through Hole
Numar pini
16
Transistor Configuration
Common Emitter
Number of Elements per Chip
7
Minimum DC Current Gain
1000
Maximum Collector Emitter Saturation Voltage
1.6 V
Inaltime
3.43mm
Latime
6.85mm
Dimensiuni
19.55 x 6.85 x 3.43mm
Temperatura minima de lucru
-20 °C
Temperatura maxima de lucru
+85 °C
Lungime
19.55mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
2 V
Maximum Emitter Base Voltage
5 V
Tip pachet
PDIP
Timp montare
Through Hole
Numar pini
16
Transistor Configuration
Common Emitter
Number of Elements per Chip
7
Minimum DC Current Gain
1000
Maximum Collector Emitter Saturation Voltage
1.6 V
Inaltime
3.43mm
Latime
6.85mm
Dimensiuni
19.55 x 6.85 x 3.43mm
Temperatura minima de lucru
-20 °C
Temperatura maxima de lucru
+85 °C
Lungime
19.55mm
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.