Documente tehnice
Specificatii
Marca
ON SemiconductorMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
300 W
Tip pachet
TO-3PN
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
16.2 x 5 x 20.1mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
30
P.O.A.
30
Documente tehnice
Specificatii
Marca
ON SemiconductorMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
300 W
Tip pachet
TO-3PN
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
16.2 x 5 x 20.1mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.