Documente tehnice
Specificatii
Marca
ON SemiconductorTip pachet
TO-220
Timp montare
Through Hole
Numar pini
2 + Tab
Maximum Power Dissipation
111 W
Transistor Configuration
Single
Latime
4.8mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
SiC
Lungime
10.67mm
Inaltime
16.51mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
2.4V
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P.O.A.
800
P.O.A.
800
Documente tehnice
Specificatii
Marca
ON SemiconductorTip pachet
TO-220
Timp montare
Through Hole
Numar pini
2 + Tab
Maximum Power Dissipation
111 W
Transistor Configuration
Single
Latime
4.8mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
SiC
Lungime
10.67mm
Inaltime
16.51mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
2.4V