Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
218 A
Maximum Drain Source Voltage
30 V
Tip pachet
PQFN
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Lungime
5mm
Typical Gate Charge @ Vgs
99 @ 10 V nC
Latime
5.85mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Inaltime
1.05mm
Dimensiune celula
PowerTrench
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
10
P.O.A.
10
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
218 A
Maximum Drain Source Voltage
30 V
Tip pachet
PQFN
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Lungime
5mm
Typical Gate Charge @ Vgs
99 @ 10 V nC
Latime
5.85mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Inaltime
1.05mm
Dimensiune celula
PowerTrench
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Detalii produs