Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
211 A
Maximum Drain Source Voltage
30 V
Tip pachet
PQFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.09 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Latime
5.85mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
10
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
211 A
Maximum Drain Source Voltage
30 V
Tip pachet
PQFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.09 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Latime
5.85mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs