P-Channel MOSFET, 6.8 A, 30 V, 6-Pin MLP onsemi FDMA530PZ
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
PowerTrench
Tip pachet
MLP
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
2mm
Transistor Material
Si
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.75mm
Detalii produs
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Idei. creează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
- Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
- Vizualizați și contribuiți cu conținutul site-ului web și forumuri
- Descărcați modele 3D, scheme și amprente de la peste un milion de produse
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
5
P.O.A.
5
Idei. creează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
- Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
- Vizualizați și contribuiți cu conținutul site-ului web și forumuri
- Descărcați modele 3D, scheme și amprente de la peste un milion de produse
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
PowerTrench
Tip pachet
MLP
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
2mm
Transistor Material
Si
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.75mm
Detalii produs
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Idei. creează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
- Descărcați și utilizați software-ul nostru DesignSpark pentru modelele dumneavoastră PCB și mecanice 3D
- Vizualizați și contribuiți cu conținutul site-ului web și forumuri
- Descărcați modele 3D, scheme și amprente de la peste un milion de produse