Documente tehnice
Specificatii
Marca
ON SemiconductorDirection Type
Bi-Directional
Diode Configuration
Single
Maximum Clamping Voltage
10V
Minimum Breakdown Voltage
5.5V
Montare
Surface Mount
Tip pachet
DSN
Maximum Reverse Stand-off Voltage
3.3V
Numar pini
2
Maximum Peak Pulse Current
16A
ESD protection
Yes
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Dimensiuni
0.625 x 0.325 x 0.207mm
Temperatura maxima de lucru
+150 °C
Inaltime
0.207mm
Latime
0.325mm
Test Current
1mA
Maximum Reverse Leakage Current
1µA
Capacitate
0.4pF
Lungime
0.625mm
Detalii produs
ESD Protectors, ON Semiconductor
Transient Voltage Suppressors, ON Semiconductor
Informatii indisponibile despre stoc
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P.O.A.
50
P.O.A.
50
Documente tehnice
Specificatii
Marca
ON SemiconductorDirection Type
Bi-Directional
Diode Configuration
Single
Maximum Clamping Voltage
10V
Minimum Breakdown Voltage
5.5V
Montare
Surface Mount
Tip pachet
DSN
Maximum Reverse Stand-off Voltage
3.3V
Numar pini
2
Maximum Peak Pulse Current
16A
ESD protection
Yes
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Dimensiuni
0.625 x 0.325 x 0.207mm
Temperatura maxima de lucru
+150 °C
Inaltime
0.207mm
Latime
0.325mm
Test Current
1mA
Maximum Reverse Leakage Current
1µA
Capacitate
0.4pF
Lungime
0.625mm
Detalii produs