Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
ECH
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Latime
2.3mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.9mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Inaltime
0.9mm
Tara de origine
China
Detalii produs
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
ECH
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Latime
2.3mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.9mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Inaltime
0.9mm
Tara de origine
China
Detalii produs