Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
PNP
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
0.0000005mA
Maximum Power Dissipation
65 W
Temperatura minima de lucru
-65 °C
Inaltime
15.75mm
Dimensiuni
10.28 x 4.82 x 15.75mm
Temperatura maxima de lucru
+150 °C
Lungime
10.28mm
Latime
4.82mm
P.O.A.
1
P.O.A.
1
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Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
PNP
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220AB
Timp montare
Through Hole
Numar pini
3
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
0.0000005mA
Maximum Power Dissipation
65 W
Temperatura minima de lucru
-65 °C
Inaltime
15.75mm
Dimensiuni
10.28 x 4.82 x 15.75mm
Temperatura maxima de lucru
+150 °C
Lungime
10.28mm
Latime
4.82mm