Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
0.2mA
Inaltime
9.28mm
Latime
4.82mm
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.28 x 4.82 x 9.28mm
Temperatura maxima de lucru
+150 °C
Lungime
10.28mm
Tara de origine
Czech Republic
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
0.2mA
Inaltime
9.28mm
Latime
4.82mm
Frecventa minima de auto-rezonanta
-65 °C
Dimensiuni
10.28 x 4.82 x 9.28mm
Temperatura maxima de lucru
+150 °C
Lungime
10.28mm
Tara de origine
Czech Republic
Detalii produs
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.