Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
PNP
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
50 V
Tip pachet
NMP
Timp montare
Through Hole
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-50 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
420 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
6.9 x 2.5 x 4.5mm
Tara de origine
China
Detalii produs
General Purpose PNP Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
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P.O.A.
2500
Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
PNP
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
50 V
Tip pachet
NMP
Timp montare
Through Hole
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-50 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
420 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
6.9 x 2.5 x 4.5mm
Tara de origine
China
Detalii produs
General Purpose PNP Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.