Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
25 V
Tip pachet
TO-92
Timp montare
Through Hole
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
5.2 x 4.19 x 5.33mm
Temperatura maxima de lucru
+150 °C
Detalii produs
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
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P.O.A.
5000
Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
25 V
Tip pachet
TO-92
Timp montare
Through Hole
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
5.2 x 4.19 x 5.33mm
Temperatura maxima de lucru
+150 °C
Detalii produs
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.