Documente tehnice
Specificatii
Marca
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Montare
Surface Mount
Tip pachet
SOT-23 (TO-236AB)
Numar pini
3
Dimensiuni
3 x 1.4 x 1mm
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Tara de origine
China
Detalii produs
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,13
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,155
Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 0,13
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,155
Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 0,13 | € 1,30 |
50 - 90 | € 0,11 | € 1,10 |
100 - 240 | € 0,11 | € 1,10 |
250 - 490 | € 0,10 | € 1,00 |
500+ | € 0,09 | € 0,90 |
Documente tehnice
Specificatii
Marca
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Montare
Surface Mount
Tip pachet
SOT-23 (TO-236AB)
Numar pini
3
Dimensiuni
3 x 1.4 x 1mm
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Tara de origine
China
Detalii produs
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.