Documente tehnice
Specificatii
Marca
NXPChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
3 x 1.4 x 1mm
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Tara de origine
China
Detalii produs
P-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Documente tehnice
Specificatii
Marca
NXPChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
3 x 1.4 x 1mm
Temperatura minima de lucru
-65 °C
Inaltime
1mm
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Tara de origine
China
Detalii produs
P-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.