Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NXPTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
40 V
Tip pachet
TO-236AB
Timp montare
Surface Mount
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
75 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
1 x 3 x 1.4mm
Temperatura maxima de lucru
+150 °C
P.O.A.
1
P.O.A.
Informatii despre stoc temporar indisponibile
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NXPTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
40 V
Tip pachet
TO-236AB
Timp montare
Surface Mount
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
75 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
1 x 3 x 1.4mm
Temperatura maxima de lucru
+150 °C


