Documente tehnice
Specificatii
Marca
NXPTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
9.5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2.5 V
Maximum Operating Frequency
900 MHz
Numar pini
3 + Tab
Number of Elements per Chip
1
Dimensiuni
6.7 x 3.7 x 1.8mm
Temperatura maxima de lucru
+175 °C
Detalii produs
RF Bipolar Transistors, NXP
Bipolar Transistors, NXP
Informatii indisponibile despre stoc
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P.O.A.
Standard
2
P.O.A.
Standard
2
Documente tehnice
Specificatii
Marca
NXPTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
9.5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2.5 V
Maximum Operating Frequency
900 MHz
Numar pini
3 + Tab
Number of Elements per Chip
1
Dimensiuni
6.7 x 3.7 x 1.8mm
Temperatura maxima de lucru
+175 °C
Detalii produs