Documente tehnice
Specificatii
Marca
NXPTransistor Type
NPN
Maximum DC Collector Current
7 mA
Maximum Collector Emitter Voltage
5 V
Tip pachet
SOT-23 (TO-236AB)
Montare
Surface Mount
Maximum Power Dissipation
32 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
8 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
5000 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
1 x 3 x 1.4mm
Temperatura maxima de lucru
+175 °C
Tara de origine
China
Detalii produs
RF Bipolar Transistors, NXP
Bipolar Transistors, NXP
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
NXPTransistor Type
NPN
Maximum DC Collector Current
7 mA
Maximum Collector Emitter Voltage
5 V
Tip pachet
SOT-23 (TO-236AB)
Montare
Surface Mount
Maximum Power Dissipation
32 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
8 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
5000 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
1 x 3 x 1.4mm
Temperatura maxima de lucru
+175 °C
Tara de origine
China
Detalii produs