Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NXPTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SPT
Timp montare
Through Hole
Numar pini
3
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2.2 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
1.8 V
Temperatura minima de lucru
-65 °C
Inaltime
5.2mm
Dimensiuni
4.8 x 4.2 x 5.2mm
Temperatura maxima de lucru
+150 °C
Lungime
4.8mm
Latime
4.2mm
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
10
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Informatii despre stoc temporar indisponibile
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NXPTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SPT
Timp montare
Through Hole
Numar pini
3
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2.2 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
1.8 V
Temperatura minima de lucru
-65 °C
Inaltime
5.2mm
Dimensiuni
4.8 x 4.2 x 5.2mm
Temperatura maxima de lucru
+150 °C
Lungime
4.8mm
Latime
4.2mm


