Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NXPTransistor Type
PNP
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
45 V
Tip pachet
TO-236AB
Timp montare
Surface Mount
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
80 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
1 x 3 x 1.4mm
P.O.A.
Standard
1
P.O.A.
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NXPTransistor Type
PNP
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
45 V
Tip pachet
TO-236AB
Timp montare
Surface Mount
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
80 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
1 x 3 x 1.4mm


