Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Tip pachet
TO-236
Dimensiune celula
PMV20XNE
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
12 V
Typical Gate Charge @ Vgs
12.4 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Number of Elements per Chip
1
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
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Buc. (Pe o rola de 3000) (fara TVA)
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Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Tip pachet
TO-236
Dimensiune celula
PMV20XNE
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
12 V
Typical Gate Charge @ Vgs
12.4 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Latime
1.4mm
Number of Elements per Chip
1
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China