Documente tehnice
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
-4.9 A
Maximum Drain Source Voltage
-12 V
Tip pachet
WLCSP
Montare
Surface Mount
Numar pini
2
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
-0.9V
Minimum Gate Threshold Voltage
-0.4V
Maximum Power Dissipation
12500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
8 V
Latime
0.75mm
Number of Elements per Chip
3
Temperatura maxima de lucru
+150 °C
Lungime
0.75mm
Typical Gate Charge @ Vgs
6.8 nC @ 10 V
Inaltime
0.315mm
Frecventa minima de auto-rezonanta
-55 °C
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
9000
P.O.A.
9000
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
-4.9 A
Maximum Drain Source Voltage
-12 V
Tip pachet
WLCSP
Montare
Surface Mount
Numar pini
2
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
-0.9V
Minimum Gate Threshold Voltage
-0.4V
Maximum Power Dissipation
12500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
8 V
Latime
0.75mm
Number of Elements per Chip
3
Temperatura maxima de lucru
+150 °C
Lungime
0.75mm
Typical Gate Charge @ Vgs
6.8 nC @ 10 V
Inaltime
0.315mm
Frecventa minima de auto-rezonanta
-55 °C