Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
1.45mm
Tara de origine
Thailand
Detalii produs
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
1.45mm
Tara de origine
Thailand
Detalii produs


