Documente tehnice
Specificatii
Marca
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
150
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
4.6 x 2.6 x 1.6mm
Tara de origine
Hong Kong
Detalii produs
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 10,00
€ 0,40 Buc. (Intr-un pachet de 25) (fara TVA)
€ 11,90
€ 0,476 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 10,00
€ 0,40 Buc. (Intr-un pachet de 25) (fara TVA)
€ 11,90
€ 0,476 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 225 | € 0,40 | € 10,00 |
250 - 600 | € 0,21 | € 5,25 |
625 - 2475 | € 0,20 | € 5,00 |
2500+ | € 0,17 | € 4,25 |
Documente tehnice
Specificatii
Marca
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
150
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
4.6 x 2.6 x 1.6mm
Tara de origine
Hong Kong
Detalii produs
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.