Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-4.9 A
Maximum Collector Emitter Voltage
-30 V
Tip pachet
SOT-223 (SC-73)
Montare
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
-30 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Numar pini
3 + Tab
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
6.7 x 3.7 x 1.8mm
Tara de origine
China
Detalii produs
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 32,50
€ 0,65 Buc. (Livrat pe rola) (fara TVA)
€ 39,32
€ 0,786 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 32,50
€ 0,65 Buc. (Livrat pe rola) (fara TVA)
€ 39,32
€ 0,786 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 50 - 90 | € 0,65 | € 6,50 |
| 100 - 190 | € 0,58 | € 5,80 |
| 200 - 390 | € 0,56 | € 5,60 |
| 400+ | € 0,54 | € 5,40 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-4.9 A
Maximum Collector Emitter Voltage
-30 V
Tip pachet
SOT-223 (SC-73)
Montare
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
-30 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Numar pini
3 + Tab
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
6.7 x 3.7 x 1.8mm
Tara de origine
China
Detalii produs
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


